First thin-film lithium tantalate modulator on fused-silica substrate achieves 64 GHz 3-dB electro-optic bandwidth, 1.53 V half-wave voltage, low bias drift to 10 mHz, and 440.6 Gbps PAM8 data rate.
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First wafer-scale foundry-compatible erbium-doped SiN tunable lasers with 91 nm tuning, 36 mW output, and 95 Hz linewidth via reduced-energy implantation on 200 nm waveguides.
Demonstration of 23.5 dB flat-top parametric gain spanning 100 THz and 313 mW on-chip power in PPLT integrated circuits for all-band amplification via cascaded second-order processes.
citing papers explorer
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Low voltage and high-bandwidth thin-film lithium tantalate modulator on a silicon dioxide substrate
First thin-film lithium tantalate modulator on fused-silica substrate achieves 64 GHz 3-dB electro-optic bandwidth, 1.53 V half-wave voltage, low bias drift to 10 mHz, and 440.6 Gbps PAM8 data rate.
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Full C- and L-band tunable erbium-doped integrated lasers via scalable manufacturing
First wafer-scale foundry-compatible erbium-doped SiN tunable lasers with 91 nm tuning, 36 mW output, and 95 Hz linewidth via reduced-energy implantation on 200 nm waveguides.
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All-band photonic integrated optical parametric amplification
Demonstration of 23.5 dB flat-top parametric gain spanning 100 THz and 313 mW on-chip power in PPLT integrated circuits for all-band amplification via cascaded second-order processes.