InAs nanofins grown by dielectric-templated selective area epitaxy can be mechanically transferred and fabricated into multi-contact Hall devices showing 3D electron densities of 2.5-5e17 cm^-3, Hall mobilities up to 1200 cm2/Vs, field-effect mobilities up to 4400 cm2/Vs, and quantum interference up
and Miglio, L., Growth ki- netics and morphological analysis of homoepitaxial GaAs fins by theo ry and experiment, Phys
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Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy
InAs nanofins grown by dielectric-templated selective area epitaxy can be mechanically transferred and fabricated into multi-contact Hall devices showing 3D electron densities of 2.5-5e17 cm^-3, Hall mobilities up to 1200 cm2/Vs, field-effect mobilities up to 4400 cm2/Vs, and quantum interference up