First-principles and NEGF calculations propose CrSb/In2Se3/Fe3GaTe2 as a multiferroic tunnel junction with TMR up to 2308%, TER of 707%, and near-perfect spin filtering at above room temperature.
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Uniaxial strain converts altermagnets to ferrimagnets with correlated valley polarization; monolayer VCrSeTeO shows intrinsic valley polarization exceeding 400 meV under strain plus SOC, accompanied by reversed valley Hall voltage within the same valley.
citing papers explorer
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Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb
First-principles and NEGF calculations propose CrSb/In2Se3/Fe3GaTe2 as a multiferroic tunnel junction with TMR up to 2308%, TER of 707%, and near-perfect spin filtering at above room temperature.
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Fully compensated and uncompensated ferrimagnetic ferrovalley semiconductors
Uniaxial strain converts altermagnets to ferrimagnets with correlated valley polarization; monolayer VCrSeTeO shows intrinsic valley polarization exceeding 400 meV under strain plus SOC, accompanied by reversed valley Hall voltage within the same valley.