Chiral orbital currents in Mn3Si2Te6 generate intrinsic inductance at low frequency and nonvolatile memristance at higher frequency under magnetic fields.
5, tiny current steps (ΔI ≈ 0.005 -0.01 mA) trigger discrete voltage jumps (ΔV up to 0.99 V) that depend strongly on field orientation: Robust for H || c (SFig
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Inductance Meets Memory in the Quantum Magnet Mn3Si2Te6
Chiral orbital currents in Mn3Si2Te6 generate intrinsic inductance at low frequency and nonvolatile memristance at higher frequency under magnetic fields.