Combinatorial HiPIMS deposition and analysis of 850 AlScBN films shows Sc+B co-alloying lowers coercive field from 7 MV/cm to 3 MV/cm at 130-150 μC/cm² polarization, reduces required Sc content, and improves cycling endurance via lower defect density.
Leakage suppression across temperature in Al₁₋ₓScₓN thin-film ferroelectric capacitors through boron incorporation
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10 nm AlBScN thin films exhibit ferroelectric switching at 2.2 MV/cm in C-V tests and 4.6 MV/cm in PUND measurements with significantly reduced leakage and a breakdown-to-coercive field ratio of ~2.2.
citing papers explorer
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Boron Co-Alloying in AlScN Wurtzite Ferroelectrics: Insights from an 850-Sample Combinatorial Study
Combinatorial HiPIMS deposition and analysis of 850 AlScBN films shows Sc+B co-alloying lowers coercive field from 7 MV/cm to 3 MV/cm at 130-150 μC/cm² polarization, reduces required Sc content, and improves cycling endurance via lower defect density.
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Low-Field Ferroelectricity in 10 nm AlBScN Thin Films
10 nm AlBScN thin films exhibit ferroelectric switching at 2.2 MV/cm in C-V tests and 4.6 MV/cm in PUND measurements with significantly reduced leakage and a breakdown-to-coercive field ratio of ~2.2.