Oxygen-rich ALD fabrication plus oxygen-free annealing suppresses oxygen vacancies and oxygen dimers in top-gate oxide transistors, yielding high-mobility In-rich devices with high PBTI reliability.
Hydrogen multicentre bonds,
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DFT study finds interstitial hydrogen switches Na/Li/Ti-doped Cu2O to n-type conductivity, reduces band gap and raises optical transmittance.
citing papers explorer
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High-Mobility and High-Reliability Top-Gate Oxide Semiconductor Transistors by Oxygen Engineering
Oxygen-rich ALD fabrication plus oxygen-free annealing suppresses oxygen vacancies and oxygen dimers in top-gate oxide transistors, yielding high-mobility In-rich devices with high PBTI reliability.
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First principle investigation of hydrogen behavior in M doped Cu$_2$O (M $=$ Na, Li and Ti)
DFT study finds interstitial hydrogen switches Na/Li/Ti-doped Cu2O to n-type conductivity, reduces band gap and raises optical transmittance.