Room-temperature fabrication protocol for SBS topological insulator nanodevices that preserves low carrier density, shown via quantum oscillations, gate tunability, and weak antilocalization.
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Fabrication of high-quality topological insulator nanodevices from bulk-insulating air-sensitive Sb-Bi$_2$Se$_3$
Room-temperature fabrication protocol for SBS topological insulator nanodevices that preserves low carrier density, shown via quantum oscillations, gate tunability, and weak antilocalization.