Vanadium doping via selenization of V2O5/WO3 bilayers increases hole conduction by three orders of magnitude and drives an insulator-to-metal transition in WSe2 films.
Control of the Schottky Barrier and Contact Re- sistance at Metal–WSe 2 Interfaces by Polymeric Doping
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Selenization of V$_2$O$_5$/WO$_3$ Bilayers for Tuned Optoelectronic Response of WSe$_2$ Films
Vanadium doping via selenization of V2O5/WO3 bilayers increases hole conduction by three orders of magnitude and drives an insulator-to-metal transition in WSe2 films.