Epitaxial bilayer bismuth on EuO(111) forms a stabilized alpha-phase bismuthene with a robust 400 meV gap and boundary-localized states consistent with a room-temperature quantum spin Hall phase.
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Monolayer CrCX3 and Janus Cr2C2S3Se3 compounds realize 2D higher-order topological insulator phases protected by C3 symmetry, hosting corner states with fractional charges even under spin-orbit coupling.
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Bismuth Films on EuO(111) as a Platform for Proximity-Induced Topological States
Epitaxial bilayer bismuth on EuO(111) forms a stabilized alpha-phase bismuthene with a robust 400 meV gap and boundary-localized states consistent with a room-temperature quantum spin Hall phase.
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Higher-order topological insulators in two-dimensional antiferromagnetic and altermagnetic chromium-based group-IV chalcogenides
Monolayer CrCX3 and Janus Cr2C2S3Se3 compounds realize 2D higher-order topological insulator phases protected by C3 symmetry, hosting corner states with fractional charges even under spin-orbit coupling.