GaN:Si and ZnO:Ga show 35 ps and 49 ps detector timing resolution for alphas, over 3x better than YAP:Ce, with ~1 mm position resolution in API-relevant setups.
Edge emission of n-type conducting ZnO and CdS.Solid-State Electronics, 9(11-12):1107–1110, 1966
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Characterization of GaN:Si and ZnO:Ga for position-resolved fast timing applications
GaN:Si and ZnO:Ga show 35 ps and 49 ps detector timing resolution for alphas, over 3x better than YAP:Ce, with ~1 mm position resolution in API-relevant setups.