First-principles calculations identify a novel band alignment at low Ge concentrations preventing 2DEG but allowing 2DHG at s-Si/SiGe interfaces, with confined states and anisotropic masses.
Kresse \ and\ author J
2 Pith papers cite this work. Polarity classification is still indexing.
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UNVERDICTED 2representative citing papers
Thin films of CrVTiAl exhibit two-channel semiconducting resistivity with activation energy 0.1-0.2 eV; DFT identifies spin-filtering phase for specific sublattice ordering along (111).
citing papers explorer
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Properties of 2D Electron or Hole Gases at Tailored s-Si/SiGe Interfaces: A First-Principles Investigation
First-principles calculations identify a novel band alignment at low Ge concentrations preventing 2DEG but allowing 2DHG at s-Si/SiGe interfaces, with confined states and anisotropic masses.
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Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl
Thin films of CrVTiAl exhibit two-channel semiconducting resistivity with activation energy 0.1-0.2 eV; DFT identifies spin-filtering phase for specific sublattice ordering along (111).