Gate voltage and occupation-dependent charge offsets appear in asymmetric gatemon junctions and modify the qubit energy spectrum and anharmonicity, with an experimental detection protocol proposed.
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Gate-dependent offset charge shifts and anharmonicity in gatemon qubits in the weak tunneling regime
Gate voltage and occupation-dependent charge offsets appear in asymmetric gatemon junctions and modify the qubit energy spectrum and anharmonicity, with an experimental detection protocol proposed.