First on-chip quantum memory in erbium-doped thin-film lithium niobate stores telecom time-bin qubits for 400 ns with 1.95% efficiency and 96.8% fidelity, exceeding the classical limit.
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2026 2representative citing papers
VOA-induced luminescence in chip-based QKD creates a spectrally separated side channel enabling information leakage even from weak emission without disturbing quantum states.
citing papers explorer
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Storage of telecom-band time-bin qubits in thin-film lithium niobate
First on-chip quantum memory in erbium-doped thin-film lithium niobate stores telecom time-bin qubits for 400 ns with 1.95% efficiency and 96.8% fidelity, exceeding the classical limit.
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Security Risks of VOA-Induced Luminescence in Chip-Based quantum key distribution
VOA-induced luminescence in chip-based QKD creates a spectrally separated side channel enabling information leakage even from weak emission without disturbing quantum states.