Repulsive exciton-electron interactions in a TMD moiré superlattice enable energy-selective ballistic exciton flow enhanced at fractional fillings, transitioning to a mixed Mott state.
Auger recombination in direct-gap semiconductors: band-structure effects.Journal of Physics C: Solid State Physics16,4159 (1983)
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Ballistic Exciton Flow Driven by Intertwined Exciton-Electron Orders in a Moir\'e Superlattice
Repulsive exciton-electron interactions in a TMD moiré superlattice enable energy-selective ballistic exciton flow enhanced at fractional fillings, transitioning to a mixed Mott state.