Stark tuning of T centres in silicon nanophotonic cavities with p-i-n diodes achieves 30 GHz shifts, resonance for 55% of on-chip emitters, tunable lifetime reduction, and a model predicting large entanglement-rate gains.
For square rod with side lengths D ≈ √σ = 0.3 µm the phonon mean free path can be approximated as Deff ≈ 1.115D = 0.3345 µm [46]
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Spectral tuning of single T centres by the Stark effect
Stark tuning of T centres in silicon nanophotonic cavities with p-i-n diodes achieves 30 GHz shifts, resonance for 55% of on-chip emitters, tunable lifetime reduction, and a model predicting large entanglement-rate gains.