Time-resolved THz polarimetry detects a helicity-dependent anomalous Hall conductivity in silicon that persists long after excitation and is independent of photon energy, pointing to an inverse orbital Hall effect.
Lampel, Nuclear Dynamic Polarization by Optical Electronic Saturation and Optical Pumping in Semiconductors
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Signature of inverse orbital Hall effect in silicon studied using time-resolved terahertz polarimetry
Time-resolved THz polarimetry detects a helicity-dependent anomalous Hall conductivity in silicon that persists long after excitation and is independent of photon energy, pointing to an inverse orbital Hall effect.