A cross waveguide design for diamond color centers achieves >5.4% excitation-to-emission conversion, <-40 dB crosstalk, 160 nm bandwidth, and fabrication feasibility with <2000 μm² footprint.
Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV
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Cross Waveguide Design for Color-Centers in Diamond for Photonic Quantum Computing
A cross waveguide design for diamond color centers achieves >5.4% excitation-to-emission conversion, <-40 dB crosstalk, 160 nm bandwidth, and fabrication feasibility with <2000 μm² footprint.