Bismuth contacts to vapor-phase-grown MoS2 nanotubes and nanoribbons are fabricated reproducibly, yielding finite room-temperature two-point resistances with median 340 kΩ in a large series.
Valence-band offsets and Schottky barrier heights of layered semiconductors explained by interface-induced gap states.Applied Physics Letters72, 1899–1901 (1998)
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Reproducible Ohmic bismuth contacts to $\textrm{MoS}_2$ nanotubes and nanoribbons
Bismuth contacts to vapor-phase-grown MoS2 nanotubes and nanoribbons are fabricated reproducibly, yielding finite room-temperature two-point resistances with median 340 kΩ in a large series.