Nitrogen doping in rutile VO2 thin films induces an iso-symmetric metal-insulator transition by suppressing V-V dimerization while preserving crystal symmetry and shortening switching time.
P., Jeynes C., Webb R
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Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2
Nitrogen doping in rutile VO2 thin films induces an iso-symmetric metal-insulator transition by suppressing V-V dimerization while preserving crystal symmetry and shortening switching time.