Ion implantation creates strain-driven microtubes in β-Ga₂O₃ that unroll into bulk-like nanomembranes upon annealing, with damage recovery at ~500°C and doping capability.
Ion-beam-induced exfoliation A (100)-oriented β-Ga2O3 sample was implanted with a fluence of 1.0×1015 cm–2 using 250 keV Cr2+ ions, with a flux lower than ~1.0×1012 cm–2 s–1
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Microtubes and nanomembranes by ion-beam-induced exfoliation of $\beta$-Ga$_{2}$O$_{3}$
Ion implantation creates strain-driven microtubes in β-Ga₂O₃ that unroll into bulk-like nanomembranes upon annealing, with damage recovery at ~500°C and doping capability.