Cryogenic MOSFETs show persistent frequency dispersion in strong inversion due to ionized-impurity-induced variable-range hopping in band-tail states distributed throughout the depletion region rather than confined to the interface.
IEEE Trans
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Beyond the interface: Persistent Hopping Transport and Frequency Dispersion in Strong-inversion Cryogenic MOSFETs
Cryogenic MOSFETs show persistent frequency dispersion in strong inversion due to ionized-impurity-induced variable-range hopping in band-tail states distributed throughout the depletion region rather than confined to the interface.