In-plane polarization in 2D ferroelectric HOTIs such as SnS provides an intrinsic mechanism to electrically switch the orbital Hall conductivity plateau within the band gap.
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ARPES data on FeTe1-xSex show a doping-driven topological phase transition between x=0.04 and 0.09 together with temperature-induced loss of topological surface-state coherence from the orbital-selective Mott phase while the Z2 invariant stays intact.
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Polarization Engineering of the Orbital Hall Conductivity in Two-dimensional Ferroelectric Higher-Order Topological Insulator Tl$_2$S and SnS
In-plane polarization in 2D ferroelectric HOTIs such as SnS provides an intrinsic mechanism to electrically switch the orbital Hall conductivity plateau within the band gap.
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Fragility of Topology under Electronic Correlations in Iron Chalcogenides
ARPES data on FeTe1-xSex show a doping-driven topological phase transition between x=0.04 and 0.09 together with temperature-induced loss of topological surface-state coherence from the orbital-selective Mott phase while the Z2 invariant stays intact.