Experiments and computations show three preferred in-plane orientations for alpha-MoO3(0k0) on mica(001) due to interface energy minima from maximal Mo-K atom proximity enabling vdW attraction.
Conventional epitax y of a thin film on single -crystal substrates involves lattice matching and strong film-substrate interface bonding [4]
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Atomistic mechanism and interface-structure-energetics of van der Waals epitaxy demonstrated by layered alpha-MoO3 growth on mica
Experiments and computations show three preferred in-plane orientations for alpha-MoO3(0k0) on mica(001) due to interface energy minima from maximal Mo-K atom proximity enabling vdW attraction.