Asymmetric well widths and barrier in a bistable potential allow finite-time bit erasure with heat below kT ln 2, bounded below by the effective free-energy change of the process.
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Improving the efficiency of finite-time memory erasure with potential barrier shaping
Asymmetric well widths and barrier in a bistable potential allow finite-time bit erasure with heat below kT ln 2, bounded below by the effective free-energy change of the process.
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