pBTI stress broadens IGZO band tail states causing negative VT shifts, revealed by DC and 1/f noise data with reversibility confirmed by recovery and hydrogen-doping simulations.
Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region
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Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements
pBTI stress broadens IGZO band tail states causing negative VT shifts, revealed by DC and 1/f noise data with reversibility confirmed by recovery and hydrogen-doping simulations.