Exciton transfer from MoSe2 to graphene is governed by charge tunneling on a 2.5 ps timescale and vanishes with a 1 nm dielectric spacer, while Förster-type dipolar transfer shows no measurable effect on bright excitons.
Title resolution pending
2 Pith papers cite this work. Polarity classification is still indexing.
2
Pith papers citing it
years
2026 2verdicts
UNVERDICTED 2representative citing papers
High-energy transitions in monolayer WSe2 show delayed dynamics relative to lower-energy excitons, attributed via transient absorption and first-principles calculations to phonon-mediated formation of momentum-dark excitons.
citing papers explorer
-
Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
Exciton transfer from MoSe2 to graphene is governed by charge tunneling on a 2.5 ps timescale and vanishes with a 1 nm dielectric spacer, while Förster-type dipolar transfer shows no measurable effect on bright excitons.
-
Nonequilibrium dynamics of high energy transitions in monolayer WSe$_{2}$
High-energy transitions in monolayer WSe2 show delayed dynamics relative to lower-energy excitons, attributed via transient absorption and first-principles calculations to phonon-mediated formation of momentum-dark excitons.