Dark count probability in pg-SPADs follows a complementary Gompertz function, from which a midpoint perimeter gate voltage is derived to characterize equiprobable operation and enable temperature compensation.
Low Dark Count Single-Photon Avalanche Diode Structure Compatible With Standard Nanometer Scale CMOS Technology,
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Modeling of Dark Count Probability in Perimeter-Gated SPADs
Dark count probability in pg-SPADs follows a complementary Gompertz function, from which a midpoint perimeter gate voltage is derived to characterize equiprobable operation and enable temperature compensation.