Cryogenic MOSFETs show persistent frequency dispersion in strong inversion due to ionized-impurity-induced variable-range hopping in band-tail states distributed throughout the depletion region rather than confined to the interface.
Low-frequency conduc- tivity due to hopping processes in silicon
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Acoustic measurements on n-InSb quantum wells reveal a parallel shunting layer, enabling separation of conduction channels and determination of the electron g-factor via the coincidence technique.
citing papers explorer
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Beyond the interface: Persistent Hopping Transport and Frequency Dispersion in Strong-inversion Cryogenic MOSFETs
Cryogenic MOSFETs show persistent frequency dispersion in strong inversion due to ionized-impurity-induced variable-range hopping in band-tail states distributed throughout the depletion region rather than confined to the interface.
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AC Conductance in n-InSb Structures with Quantum Well. Acoustic Studies
Acoustic measurements on n-InSb quantum wells reveal a parallel shunting layer, enabling separation of conduction channels and determination of the electron g-factor via the coincidence technique.