Epitaxial growth stabilizes a layered tetragonal FeGe2 (P4mm) phase in Ge(Fe,Si) films that does not exist as a bulk material.
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cond-mat.mtrl-sci 2years
2019 2verdicts
UNVERDICTED 2representative citing papers
Co2FeSi films grown on GaAs(111)B by MBE show L21 and B2 ordering with spatial variations explained by non-stoichiometry or stress, and stable interfaces up to 275°C.
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Ordered structure of FeGe$_2$ formed during solid-phase epitaxy
Epitaxial growth stabilizes a layered tetragonal FeGe2 (P4mm) phase in Ge(Fe,Si) films that does not exist as a bulk material.
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Long-range order and thermal stability of thin Co$_{2}$FeSi films on GaAs(111)B
Co2FeSi films grown on GaAs(111)B by MBE show L21 and B2 ordering with spatial variations explained by non-stoichiometry or stress, and stable interfaces up to 275°C.