In-plane polarization in 2D ferroelectric HOTIs such as SnS provides an intrinsic mechanism to electrically switch the orbital Hall conductivity plateau within the band gap.
Ezawa, Magnetic second-order topological insulators and semimetals, Physical Review B 97, 155305 (2018)
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Polarization Engineering of the Orbital Hall Conductivity in Two-dimensional Ferroelectric Higher-Order Topological Insulator Tl$_2$S and SnS
In-plane polarization in 2D ferroelectric HOTIs such as SnS provides an intrinsic mechanism to electrically switch the orbital Hall conductivity plateau within the band gap.