Oxygen-rich ALD fabrication plus oxygen-free annealing suppresses oxygen vacancies and oxygen dimers in top-gate oxide transistors, yielding high-mobility In-rich devices with high PBTI reliability.
Multiple effects of hydrogen on InGaZnO thin-film transistor and the hydrogenation-resistibility enhancement,
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
High-Mobility and High-Reliability Top-Gate Oxide Semiconductor Transistors by Oxygen Engineering
Oxygen-rich ALD fabrication plus oxygen-free annealing suppresses oxygen vacancies and oxygen dimers in top-gate oxide transistors, yielding high-mobility In-rich devices with high PBTI reliability.