Oxygen and fluorine functionalization of MoS2 lowers the sulfur sputtering threshold from ~30 eV to ~10 eV via SO2 and SFn formation, with cryogenic temperatures further modulating the threshold according to a parameter-free theory.
Time‐reversible always stable predictor–corrector method for molecular dy- namics of polarizable molecules
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Transition Metal Dichalcogenide MoS${}_2$: oxygen and fluorine functionalization for selective plasma processing
Oxygen and fluorine functionalization of MoS2 lowers the sulfur sputtering threshold from ~30 eV to ~10 eV via SO2 and SFn formation, with cryogenic temperatures further modulating the threshold according to a parameter-free theory.