pBTI stress broadens IGZO band tail states causing negative VT shifts, revealed by DC and 1/f noise data with reversibility confirmed by recovery and hydrogen-doping simulations.
The Influ- ence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin- Film Transistors With Atomic-Layer Deposition of Al2O3
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
citation-role summary
background 1
citation-polarity summary
fields
cond-mat.mtrl-sci 1years
2026 1verdicts
UNVERDICTED 1roles
background 1polarities
background 1representative citing papers
citing papers explorer
-
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements
pBTI stress broadens IGZO band tail states causing negative VT shifts, revealed by DC and 1/f noise data with reversibility confirmed by recovery and hydrogen-doping simulations.