CVD-grown nanodiamonds of ~60 nm achieve mean T1 spin relaxation times of 800 μs with maxima over 1.8 ms, nearly ten times longer than commercial nanodiamonds in the 50-150 nm range.
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Eu doping in plasma-assisted MBE-grown CdO/Si diodes raises rectifying factor and responsivity while enabling zero-bias photocurrent across visible to near-IR wavelengths.
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Long Spin Relaxation Times in CVD-Grown Nanodiamonds
CVD-grown nanodiamonds of ~60 nm achieve mean T1 spin relaxation times of 800 μs with maxima over 1.8 ms, nearly ten times longer than commercial nanodiamonds in the 50-150 nm range.
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Eu-assisted enhancement of photoresponse in MBE-grown CdO/Si photodetectors
Eu doping in plasma-assisted MBE-grown CdO/Si diodes raises rectifying factor and responsivity while enabling zero-bias photocurrent across visible to near-IR wavelengths.