Higher tin content in ZnSnO buffers raises the conduction band minimum, producing transport barriers at high tin levels and conduction band cliffs at low tin levels for chalcopyrite absorbers.
Near surface defects: Cause of deficit between internal and external open‐circuit voltage in solar cells
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ALD Zinc Tin Oxide Buffers for Chalcopyrite Solar Cells: Electrical Barriers and Conduction Band Cliffs
Higher tin content in ZnSnO buffers raises the conduction band minimum, producing transport barriers at high tin levels and conduction band cliffs at low tin levels for chalcopyrite absorbers.