Cryogenic MOSFETs show persistent frequency dispersion in strong inversion due to ionized-impurity-induced variable-range hopping in band-tail states distributed throughout the depletion region rather than confined to the interface.
IEEE Electron Device Lett
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A review assessing PINN advances for forward modeling, inverse design, and equation discovery across multi-physics domains.
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Beyond the interface: Persistent Hopping Transport and Frequency Dispersion in Strong-inversion Cryogenic MOSFETs
Cryogenic MOSFETs show persistent frequency dispersion in strong inversion due to ionized-impurity-induced variable-range hopping in band-tail states distributed throughout the depletion region rather than confined to the interface.
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Beyond Data-Driven: How Physics-Informed Neural Networks are Reshaping Multi-Physics Design and Discovery
A review assessing PINN advances for forward modeling, inverse design, and equation discovery across multi-physics domains.