Implanted 6He occupies tetrahedral interstitial sites in diamond; diffusion onset at 800°C yields activation energy 1.63-2.89 eV consistent with theory.
Lal, An important source of 4He (and 3He) in diamonds, Earth and Planetary Science Letters 96 , 1 (1989)
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Lattice location of ion-implanted 6He in diamond
Implanted 6He occupies tetrahedral interstitial sites in diamond; diffusion onset at 800°C yields activation energy 1.63-2.89 eV consistent with theory.