Nanosecond pulsed illumination at 532-1064 nm on the Si-SiO2 interface in atmospheric SeBDs enhances plasma emission and reduced electric field via wavelength-dependent photogeneration of carriers in the depletion region, analogous to MOS photodetector behavior.
Modification of the electric field distribution in a diffuse streamer-induced discharge under extreme overvoltage.Plasma Sources Science and Technology, 28(5):055016
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Photonic Interactions with Semiconducting Barrier Discharges
Nanosecond pulsed illumination at 532-1064 nm on the Si-SiO2 interface in atmospheric SeBDs enhances plasma emission and reduced electric field via wavelength-dependent photogeneration of carriers in the depletion region, analogous to MOS photodetector behavior.