Grain growth in (Cr,Mo,Ta,V,W)C1-δ follows a normal-growth model with n=3, yielding an apparent activation energy of ~620 kJ mol⁻¹ and reduced Ta segregation at higher sintering temperatures.
Thermal and electrical properties of a high entropy carbide (Ta, Hf, Nb, Zr) at elevated temperatures
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Grain Growth Kinetics in (Cr,Mo,Ta,V,W)C1-{\delta} High-Entropy Carbide Ceramics
Grain growth in (Cr,Mo,Ta,V,W)C1-δ follows a normal-growth model with n=3, yielding an apparent activation energy of ~620 kJ mol⁻¹ and reduced Ta segregation at higher sintering temperatures.