All-MOCVD long-gate AlScN/GaN MIS-HEMTs on semi-insulating GaN substrates deliver 1 A/mm drain current, 63 mV/dec subthreshold swing, 25.8/51.1 GHz fT/fmax, 4.04 W/mm output power at 10 GHz with 22.7% PAE, and noise figure under 2.5 dB.
The impact of post gate annealing on microwave noise performance of AlGaN/GaN HEMTs
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
physics.app-ph 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
All-MOCVD long-gate AlScN/GaN MIS-HEMTs on semi-insulating GaN substrates deliver 1 A/mm drain current, 63 mV/dec subthreshold swing, 25.8/51.1 GHz fT/fmax, 4.04 W/mm output power at 10 GHz with 22.7% PAE, and noise figure under 2.5 dB.