Dark count probability in pg-SPADs follows a complementary Gompertz function, from which a midpoint perimeter gate voltage is derived to characterize equiprobable operation and enable temperature compensation.
Characterization of Single-Photon Avalanche Diodes in a 0.5µm Standard CMOS Process—Part 2: Equivalent Circuit Model and Geiger Mode Readout,
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Modeling of Dark Count Probability in Perimeter-Gated SPADs
Dark count probability in pg-SPADs follows a complementary Gompertz function, from which a midpoint perimeter gate voltage is derived to characterize equiprobable operation and enable temperature compensation.