Citation notice #10052 · 2026-08-14 06:18:03.494517+00:00
Revealing the Atomic Structure of NiO/Ga$_{2}$O$_{3}$ Interfaces
cites APL Materials , author =, which carries a correction notice dated 2021-04-08. One-hop deterministic notice: the citation edge exists in the Pith bibliography graph; no model judged whether the citation was load-bearing.
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01Evidence
Raw extraction · bibliography line · bibliography index 58
Adsorption-controlled growth of. APL Materials , author =. 2021 , pages =. doi:10.1063/5.0035469 , abstract =
Parser render (TeX stripped for reading; raw above is the evidence)
Adsorption-controlled growth of. APL Materials, author =. 2021, pages =. doi:10.1063/5.0035469, abstract =
02Event
- Type
- Correction
- Source
- Crossref
- Original DOI
- 10.1063/5.0035469
- Notice DOI
- 10.1063/5.0050412
- Date
- 2021-04-08
- Title
- Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)]
- Reasons
- ['Correction']
- Work
- APL Materials , author = (2021)
03Dispute this notice
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