Citation notice #7808 · 2026-07-13 06:30:08.467213+00:00
Fast Homoepitaxy on (100) \b{eta}-Ga2O3 Substrates with Large Grown-In Offcut
Correction
Crossref
Open
cites 10.1063/5.0238259, which carries a correction notice dated 2025-02-13. One-hop deterministic notice: the citation edge exists in the Pith bibliography graph; no model judged whether the citation was load-bearing.
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01Evidence
Raw extraction · bibliography line · bibliography index 3
H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa, Y . Yaguchi, Jpn. J. Appl. Phys. 2008, 47, 8506. [72] T.-S. Chou, J. Rehm, S. Bin Anooz, C. Wouters, O. Ernst, A. Akhtar, Z. Galazka, M. Albrecht, A. Fiedler, A. Popp, Appl. Phys. Lett. 2025, 126, 022101. [73] J. P . McCandless, C. A. Gorsak, V . Protasenko, D. G. Schlom, M. O. Thompson, H. G. Xing, D. Jena, H. P . Nair, Applied Physics Letters 2024, 124, 111601. [74] T. J. Asel, E. Steinbrunner, J. Hendricks, A. T. Neal, S. Mou, Journal of Vacuum Science & Technology A 2020, 38, 043403. [75] J. Yang, S. Ahn, F . Ren, S. J. Pearton, S. Jang, J. Kim, A. Kuramata, Applied Physics Letters 2017, 110, 192101. [76] R. M. Lavelle, W. J. Everson, D. J. Erdely, L. A. M. Lyle, S. W. Pistner, S. R. Hallacher, J. M. Redwing, D. W. Snyder, Materials Science in Semiconductor Processing 2025, 190, 109341. [77] S. Schaefer, M. Smeaton, K. Egbo, S. Hasan, W. Callahan, G. Teeter, A. Zakutayev, M. B. Tellekamp, Applied Physics Letters 2024, DOI 10.1063/5.0238259. [78] L. A. Giannuzzi, J. L. Drown, S. R. Brown, R. B. Irwin, F . A. Stevie, Microscopy Research and Technique 1998, 41, 285. 18 Supplementary Material for Fast Epitaxial Growth of Ga2O
02Event
- Type
- Correction
- Source
- Crossref
- Original DOI
- 10.1063/5.0238259
- Notice DOI
- 10.1063/5.0259706
- Date
- 2025-02-13
- Title
- Erratum: “Epitaxial (AlxGa1−x−yIny)2O3 alloys lattice matched to monoclinic Ga2O3 substrates” [Appl. Phys. Lett. <b>125</b> , 172106 (2024)]
- Reasons
- ['Correction']
- Work
- - (2008) Applied Physics Letters
03Dispute this notice
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