Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device

Andr\'e Crahay (UCL); Christophe Krzeminski (IEMN-ISEN); Emmanuel Dubois (IEMN); Nicolas Reckinger (UCL); Vincent Bayot (UCL); Xiaohui Tang (UCL)

arxiv: 1109.2927 · v2 · pith:DRCATGKUnew · submitted 2011-09-13 · ❄️ cond-mat.mtrl-sci

Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device

Christophe Krzeminski (IEMN-ISEN) , Emmanuel Dubois (IEMN) , Xiaohui Tang (UCL) , Nicolas Reckinger (UCL) , Andr\'e Crahay (UCL) , Vincent Bayot (UCL) This is my paper

classification ❄️ cond-mat.mtrl-sci

keywords alternativememorynano-flashorderprocesssimulationbeendevice

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Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.

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Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device

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