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arxiv: 1110.5506 · v1 · pith:LYK2CHIHnew · submitted 2011-10-25 · ❄️ cond-mat.mtrl-sci

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

Nicolas Reckinger , Xiaohui Tang Vincent Bayot , Dmitri A. Yarekha , Emmanuel Dubois , Sylvie Godey , Xavier Wallart , Guilhem Larrieu , Adam Laszcz
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Jacek Ratajczak Pascal J. Jacques Jean-Pierre Raskin
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classification ❄️ cond-mat.mtrl-sci
keywords annealingbarriercrystallineformationn-sischottkysilicidex-ray
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The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.

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