On melting of silicon carbide under pressure

Petr S. Sokolov; Thierry Chauveau; Vladimir A. Mukhanov; Vladimir L. Solozhenko

arxiv: 1210.3244 · v1 · pith:75TPF3EDnew · submitted 2012-10-11 · ❄️ cond-mat.mtrl-sci

On melting of silicon carbide under pressure

Petr S. Sokolov , Vladimir A. Mukhanov , Thierry Chauveau , Vladimir L. Solozhenko This is my paper

classification ❄️ cond-mat.mtrl-sci

keywords meltingbeencarbidesiliconcongruentlycurvefoundmelts

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The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of -44 +/- 4 K/GPa.

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On melting of silicon carbide under pressure

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