Interface Phonon Modes in the [AlN/GaN]20 and [Al0.35Ga0.65N/Al0.55Ga0.45N]20 2D Multi Quantum Well Structures

A. Bhattacharyya; A. K. Sivadasan; Chirantan Singha; Sandip Dhara

arxiv: 1705.04445 · v1 · pith:SEXOHHZTnew · submitted 2017-05-12 · ❄️ cond-mat.mtrl-sci

Interface Phonon Modes in the [AlN/GaN]20 and [Al0.35Ga0.65N/Al0.55Ga0.45N]20 2D Multi Quantum Well Structures

A. K. Sivadasan , Chirantan Singha , A. Bhattacharyya , Sandip Dhara This is my paper

classification ❄️ cond-mat.mtrl-sci

keywords modesphononwellinterfacelayersmultiquantumstructures

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Interface phonon (IF) modes of c-plane oriented [AlN/GaN]20 and Al0.35Ga0.65N/Al0.55Ga0.45N]20 multi quantum well (MQW) structures grown via plasma assisted molecular beam epitaxy are reported. The effect of variation in dielectric constant of barrier layers to the IF optical phonon modes of well layers periodically arranged in the MQWs investigated.

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Interface Phonon Modes in the [AlN/GaN]20 and [Al0.35Ga0.65N/Al0.55Ga0.45N]20 2D Multi Quantum Well Structures

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