Characterization of the Hamamatsu VUV4 MPPCs for nEXO

G. Gallina , P. Giampa , F. Retiere , J. Kroeger , G. Zhang , M. Ward , P. Margetak , G. Lic

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T. Tsang L. Doria S. Al Kharusi M. Alfaris G. Anton I.J. Arnquist I. Badhrees P.S. Barbeau D. Beck V. Belov T. Bhatta J. Blatchford J. P. Brodsky E. Brown T. Brunner G. F. Cao L. Cao W. R. Cen C. Chambers S. A. Charlebois M. Chiu B. Cleveland M. Coon A. Craycraft J. Dalmasson T. Daniels L. Darroch S. J. Daugherty A. De St. Croix A. Der Mesrobian-Kabakian R. DeVoe J. Dilling Y. Y. Ding M. J. Dolinski A. Dragone J. Echevers M. Elbeltagi L. Fabris D. Fairbank W. Fairbank J. Farine S. Feyzbakhsh R. Fontaine P. Gautam G. Giacomini R. Gornea G. Gratta E. V. Hansen M. Heffner E. W. Hoppe J. Ho{\ss}l A. House M. Hughes Y. Ito A. Iverson A. Jamil M. J. Jewell X. S. Jiang A. Karelin L. J. Kaufman D. Kodroff T. Koffas R. Krucken A. Kuchenkov K. S. Kumar Y. Lana A. Larson B.G. Lenardo D. S. Leonarda S. Lik Z. Li C. Licciardi Y. H. Linw P. Lv R. MacLellan T. McElroy M. Medina-Peregrina T. Michel B. Mong D. C. Moore K. Murray P. Nakarmi R. J. Newby Z. Ning O. Njoya F. Nolet O. Nusair K. Odgers A. Odian M. Oriunno J. L. Orrell G. S. Ortega I. Ostrovskiy C. T. Overman S. Parent A. Piepkez A. Pocar J.-F. Pratte D. Qiu V. Radeka E. Raguzin S. Rescia M. Richman A. Robinson T. Rossignol P. C. Rowson N. Roy R. Saldanha S. Sangiorgio K. Skarpaas VIII A. K. Soma G. St-Hilaire V. Stekhanov T. Stiegler X. L. Sun M. Tarka J. Todd T. Tolba T. I. Totev R. Tsang F. Vachon V. Veeraraghavan G. Visser J.-L. Vuilleumier M. Wagenpfeil M. Walent Q. Wang J. Watkins M. Weber W. Wei L. J. Wen U. Wichoski S. X. Wu W. H. Wu X. Wu Q. Xia H. Yang L. Yang Y.-R. Yen O. Zeldovich J. Zhao Y. Zhou T. Ziegler

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keywords textnexohamamatsuvuv4reportsipmsvoltageavalanches

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In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Silicon Photo-Multipliers (SiPMs) as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various SiPM features, such as: dark noise, gain, correlated avalanches, direct crosstalk and Photon Detection Efficiency (PDE) were measured in a dedicated setup at TRIUMF. SiPMs were characterized in the range $163 \text{ } \text{K} \leq \text{T}\leq 233 \text{ } \text{K}$. At an over voltage of $3.1\pm0.2$ V and at $\text{T}=163 \text{ }\text{K}$ we report a number of Correlated Avalanches (CAs) per pulse in the $1 \upmu\text{s}$ interval following the trigger pulse of $0.161\pm0.005$. At the same settings the Dark-Noise (DN) rate is $0.137\pm0.002 \text{ Hz/mm}^{2}$. Both the number of CAs and the DN rate are within nEXO specifications. The PDE of the Hamamatsu VUV4 was measured for two different devices at $\text{T}=233 \text{ }\text{K}$ for a mean wavelength of $189\pm7\text{ nm}$. At $3.6\pm0.2$ V and $3.5\pm0.2$ V of over voltage we report a PDE of $13.4\pm2.6\text{ }\%$ and $11\pm2\%$, corresponding to a saturation PDE of $14.8\pm2.8\text{ }\%$ and $12.2\pm2.3\%$, respectively. Both values are well below the $24\text{ }\%$ saturation PDE advertised by Hamamatsu. More generally, the second device tested at $3.5\pm0.2$ V of over voltage is below the nEXO PDE requirement. The first one instead yields a PDE that is marginally close to meeting the nEXO specifications. This suggests that with modest improvements the Hamamatsu VUV4 MPPCs could be considered as an alternative to the FBK-LF SiPMs for the final design of the nEXO detector.

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Characterization of the Hamamatsu VUV4 MPPCs for nEXO

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