Visualizing buried local carrier diffusion in halide perovskite crystals via two-photon microscopy

Halide perovskites have shown great potential for light emission and photovoltaic applications due to their remarkable electronic properties and compatibility with cost-effective fabrication techniques. Although the device performances are promising, they are still limited by microscale heterogeneities in their photophysical properties. In particular, the relation between local heterogeneities and the diffusion of charge carriers at the surface and in the bulk, crucial for efficient collection of charges in a light harvesting device, is not well understood. Here, a photoluminescence tomography technique is developed in a confocal microscope using one- and two-photon excitation to distinguish between local surface and bulk diffusion of charge carriers in methylammonium lead bromide single crystals. The local temporal diffusion is probed at various excitation depths to build statistics of local electronic diffusion coefficients. The measured values range between 0.3 to 2 $cm^2.s^{-1}$ depending on the local trap density and the morphological environment - a distribution that would be missed from analogous macroscopic or surface-measurements. Tomographic images of carrier diffusion were reconstructed to reveal buried crystal defects that act as barriers to carrier transport. This work reveals a new framework to understand and homogenise diffusion pathways, which are extremely sensitive to local properties and buried defects.