Demonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell

Hiroyuki Takeya; Kensei Terashima; Miren Esparza Echevarria; Pedro Baptista de Castro; Peng Song; Ryo Matsumoto; Sayaka Yamamoto; Shintaro Adachi; Suguru Iwasaki; Takafumi D. Yamamoto

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arxiv 2002.09835 v2 pith:GNZRNTIE submitted 2020-02-23 cond-mat.mtrl-sci cond-mat.supr-con

Demonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell

Shintaro Adachi , Ryo Matsumoto , Sayaka Yamamoto , Takafumi D. Yamamoto , Kensei Terashima , Yoshito Saito , Miren Esparza Echevarria , Pedro Baptista de Castro

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Peng Song Suguru Iwasaki Hiroyuki Takeya Yoshihiko Takano

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classification cond-mat.mtrl-sci cond-mat.supr-con

keywords highpressureunderanvilcelldiamonddoubleedlt-dac

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We have developed an approach to control the carrier density in various material under high pressure by the combination of an electric double layer transistor (EDLT) with a diamond anvil cell (DAC). In this study, this EDLT-DAC was applied to a Bi thin film, and here we report the field-effect under high pressure in the material. Our EDLT-DAC is a promising device for exploring unknown physical phenomena such as high transition-temperature superconductivity (HTS).

Demonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell

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